• State-of-the-art laser emission resolution, 3 nm, for VCSEL applications market • Extremely high thickness and doping uniformities across 8x6in or 4x8in wafers run • Final qualification expected by 4th quarter for high volume optoelectronic and micro-electronic applications Bezons (France), June 14, 2023 – 5:45pm (CET) – RIBER, the global leader for molecular beam epitaxy
Hybrid Epitaxy – A New Epi-model to Support III-V Semiconductors This presentation described the evolution of epi-foundries from early day traditional merchant single source epitaxy services to nowadays hybrid epitaxy model with not only epi-tools integration but also the addition of regrowth and post-growth metallization steps to the epi-device structures. Since III-V semiconductors in particular
IntelliEPI and IVWorks signed a JDA upon a successful factory inspection to IntelliEPI in September, 2021. In the agreement, both companies committed to strengthen the collaboration in the successful demonstration of GaN growth in large format MBE systems, sharing epitaxial material capabilities, and market development. The modified 7×6” MBE system was successfully shipped to Korea
IntelliEPI is committed to Corporate Social Responsibility (CSR) that is based on and consistent with the Responsible Business Alliance (RBA, formerly EICC) Code of Conduct, which establishes standards designed to ensure that working conditions are safe, that workers are treated with respect and dignity, and that business operations are environmentally responsible and conducted ethically. As
Due to end of lease, IET Taipei office is moving to its new location: Address: 6F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.) 台北市士林區德行西路33號6樓 Telphone： 02-2837-1206 Fax: 02-2837-1606
This is a joint partnership announcement between IVWorks Co., Ltd. (IVWorks) and Intelligent Epitaxy Technology, Inc. (IntelliEPI) on the technology and business development for GaN epi materials based on molecular beam epitaxy (MBE) technology. The two companies have been collaborating closely on the development of production scale of GaN epi wafers by MBE since 2018.
We recently received Government funding for the development of GaN on Si for automotive power device application. This is to support the growing electric vehicle (EV) market. GaN/Si power device offers a technology pathway to meet the cost and performance target necessary for widespread market adoption. For this effort, we plan to develop high quality
Bernin (Grenoble), France, and Richardson, Texas, September 29th, 2014 — Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, is today announcing the sale of the gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics subsidiary to Intelligent Epitaxy Technology Inc. (IntelliEPI, GTSM Taiwan: F-IET
Due to end of lease, IET Taipei office is moving to its new location: Address: 5F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.) 台北市士林區德行西路33號5樓 Telphone： 02-2837-1206 Fax: 02-2837-1606
Bernin (Grenoble), France, and Richardson, Texas, December 12, 2013 — Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Intelligent Epitaxy Technology, Inc. (IntelliEPI, GTSM Taiwan: F-IET #4971), a leader in providing indium phosphide (InP), gallium arsenide (GaAs), and gallium antimonide (GaSb) epitaxial wafers to
Page 1 of 2
© 2024 Copyright IntelliEPI. All rights reserved