Aug 18, 2020 Joint partnership announcement between IVWorks Co., Ltd. (IVWorks) and Intelligent Epitaxy Technology, Inc. (IntelliEPI) on the technology and business development for GaN epi materials based on molecular beam epitaxy (MBE) technology.
This is a joint partnership announcement between IVWorks Co., Ltd. (IVWorks) and Intelligent Epitaxy Technology, Inc. (IntelliEPI) on the technology and business development for GaN epi materials based on molecular beam epitaxy (MBE) technology. The two companies have been collaborating closely on the development of production scale of GaN epi wafers by MBE since 2018. The framework of technical and marketing alliances was formalized in 2019.
GaN/Si (up to 200mm) and GaN/SiC (up to 150mm) are now available for evaluation.
IVWorks, an innovative start-up company that utilizes Hybrid-MBE technology to produce high-quality GaN epi-wafers, has developed a machine learning-based artificial intelligence (AI) epitaxy system “DommTM”, dramatically improving the productivity and scalability. Hybrid-MBE growth is performed with a hybrid nitrogen source of ammonia and plasma for optimal quality and high growth rate. In addition, DommTM, the IVWorks’ AI technology, uses a deep learning algorithm to detect and analyze reflection high energy electron diffraction (RHEED) patterns, which can monitor crystal growth at the atomic level during MBE growth in real-time. Furthermore, a prediction model is created by learning the validity and correlation of the dataset that integrates classified RHEED patterns, growth conditions, and quality results of the epiwafers. This prediction model can be applied to epiwafer manufacturing to maximize productivity.
IntelliEPI specializes in As, P, and Sb based MBE epi wafer production as well as GaSb substrates manufacturing. Its products include a wide range of electrical and optical device epitaxy wafers. IntelliEPI will leverage its strength in high volume MBE production, equipment modification, and component manufacturing to quickly bring GaN to its product line.
Dr. Young-kyun Noh, IVWorks’ CEO, comments: “We are excited by the opportunities that will result from this partnership. By partnering with MBE epi wafer production experts such as IntelliEPI, we will accelerate the role we play in supplying high quality GaN epi-wafers to the global semiconductor industry through the revolutionary AI manufacturing system, while enhancing market penetration and response. Thanks to IntelliEPI’s long experience of compound semiconductor epi wafer business and large-scale production, we will be able to significantly strengthen competitiveness for the GaN epi business.”
Dr. Yung-Chung Kao, IntelliEPI’s President and CEO, comments: “This partnership will advance MBE GaN growth by combining AI technology from IVWorks and IntelliEPI’s large-scale production MBE growth capabilities and related equipment expertise. IntelliEPI will work closely with IVWorks to develop a global business based on MBE GaN technology for RF and power device markets.”
IVWorks’ 200mm GaN HFET on Si epi-wafer
IVWorks Co., Ltd. (IVWorks), which manufactures GaN epitaxial wafers by using the deep learning-based AI epitaxy technology, was established in 2011 in Daejeon, South Korea to supply GaN epi wafers to the RF and power electronics industries. The company is currently manufacturing 100 mm to 200 mm GaN epi wafers by using three production MBE systems.
Intelligent Epitaxy Technology, Inc. (IntelliEPI), was established in 1999 in Richardson, Texas to supply epitaxy-based compound semiconductor epi wafers to the electronics and optoelectronics industries. The company utilizes its proprietary real-time in-situ growth monitoring technology on MBE systems for the manufacturing of epi wafers on GaAs, InP, GaSb and other substrates. Along with IntelliEPI’s extensive experience in MBE material growth technology, the company owns three U.S. patents on real-time in situ growth sensor technology. For more information, visit: http://www.intelliepi.com.