June 28, 2020 Received Government funding for the development of GaN on Si for automotive power device application.
By Wayne Wang - On 17 Aug, 2020 - 0 comments
We recently received Government funding for the development of GaN on Si for automotive power device application. This is to support the growing electric vehicle (EV) market. GaN/Si power device offers a technology pathway to meet the cost and performance target necessary for widespread market adoption. For this effort, we plan to develop high quality GaN/Si HEMT epi wafers utilizing advanced production MBE technology platform. We will also work closely with our industrial partners to demonstrate the feasibility to mass-produce GaN on Si substrates (150 mm or larger) power devices for EV applications.