June 28, 2020 Received Government funding for the development of GaN on Si for automotive power device application.
We recently received Government funding for the development of GaN on Si for automotive power device application. This is to support the growing electric vehicle (EV) market. GaN/Si power device offers a technology pathway to meet the cost and performance target necessary for widespread market adoption. For this effort, we plan to develop high quality GaN/Si HEMT epi wafers utilizing advanced production MBE technology platform. We will also work closely with our industrial partners to demonstrate the feasibility to mass-produce GaN on Si substrates (150 mm or larger) power devices for EV applications.