IntelliEPI and IVWorks signed a JDA upon a successful factory inspection to IntelliEPI in September, 2021. In the agreement, both companies committed to strengthen the collaboration in the successful demonstration of GaN growth in large format MBE systems, sharing epitaxial material capabilities, and market development. The modified 7×6” MBE system was successfully shipped to Korea
IntelliEPI is committed to Corporate Social Responsibility (CSR) that is based on and consistent with the Responsible Business Alliance (RBA, formerly EICC) Code of Conduct, which establishes standards designed to ensure that working conditions are safe, that workers are treated with respect and dignity, and that business operations are environmentally responsible and conducted ethically. As
Due to end of lease, IET Taipei office is moving to its new location: Address: 6F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.) 台北市士林區德行西路33號6樓 Telphone： 02-2837-1206 Fax: 02-2837-1606
Aug 18, 2020 Joint partnership announcement between IVWorks Co., Ltd. (IVWorks) and Intelligent Epitaxy Technology, Inc. (IntelliEPI) on the technology and business development for GaN epi materials based on molecular beam epitaxy (MBE) technology.
This is a joint partnership announcement between IVWorks Co., Ltd. (IVWorks) and Intelligent Epitaxy Technology, Inc. (IntelliEPI) on the technology and business development for GaN epi materials based on molecular beam epitaxy (MBE) technology. The two companies have been collaborating closely on the development of production scale of GaN epi wafers by MBE since 2018.
June 28, 2020 Received Government funding for the development of GaN on Si for automotive power device application.
We recently received Government funding for the development of GaN on Si for automotive power device application. This is to support the growing electric vehicle (EV) market. GaN/Si power device offers a technology pathway to meet the cost and performance target necessary for widespread market adoption. For this effort, we plan to develop high quality
Due to end of lease, IET Taipei office is moving to its new location: Address: 5F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.) 台北市士林區德行西路33號5樓 Telphone： 02-2837-1206 Fax: 02-2837-1606
Dec 12, 2013 SOITEC AND INTELLIEPI ENTER IN COLLABORATION AGREEMENT TO BETTER SERVE THE GALLIUM ARSENIDE (GaAs) MARKET
Bernin (Grenoble), France, and Richardson, Texas, December 12, 2013 — Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Intelligent Epitaxy Technology, Inc. (IntelliEPI, GTSM Taiwan: F-IET #4971), a leader in providing indium phosphide (InP), gallium arsenide (GaAs), and gallium antimonide (GaSb) epitaxial wafers to
Aug 1, 2012 Multi-year, Multi-Million Dollar Epitaxial Wafer Supply Contract with a Major US High Frequency Instruments Manufacturer
Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries, is pleased to announce a multi-year multi-million dollar epitaxial wafer supply contract with a US Fortune 500 scientific instruments and network equipment manufacturing company. IntelliEPI will provide dedicated MBE services to produce
IntelliEPI has kicked off the new large diameter GaSb substrate task under a US DoD funded program. This is a multi-year extensive project for IntelliEPI to develop 4in and larger diameter GaSb crystal pulling technology and to improve epi-ready wafer polishing technique with high flatness. IntelliEPI plans to use its new facility in Allex, Texas
IntelliEPI has received a new, state-of-the-art 7×6 inch Molecular Beam Epitaxy (MBE) system from Riber, ISA. This machine will strengthen IntelliEPI’s position for pHEMT production and gives future flexibility for upgrading and overhauling other MBE systems for P-based and Sb-based MBE growth.
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