By Wayne Wang - On 18 Aug, 2020 - 0 comments
This is a joint partnership announcement between IVWorks Co., Ltd. (IVWorks) and Intelligent Epitaxy Technology, Inc. (IntelliEPI) on the technology and business development for GaN epi materials based on molecular beam epitaxy (MBE) technology. The two companies have been collaborating closely on the development of production scale of GaN epi wafers by MBE since 2018.
By Wayne Wang - On 17 Aug, 2020 - 0 comments
We recently received Government funding for the development of GaN on Si for automotive power device application. This is to support the growing electric vehicle (EV) market. GaN/Si power device offers a technology pathway to meet the cost and performance target necessary for widespread market adoption. For this effort, we plan to develop high quality
By admin - On 09 Jan, 2014 - 0 comments
Due to end of lease, IET Taipei office is moving to its new location: Address: 5F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.) 台北市士林區德行西路33號5樓 Telphone： 02-2837-1206 Fax: 02-2837-1606
By admin - On 12 Dec, 2013 - 0 comments
Bernin (Grenoble), France, and Richardson, Texas, December 12, 2013 — Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Intelligent Epitaxy Technology, Inc. (IntelliEPI, GTSM Taiwan: F-IET #4971), a leader in providing indium phosphide (InP), gallium arsenide (GaAs), and gallium antimonide (GaSb) epitaxial wafers to
By admin - On 01 Aug, 2012 - 0 comments
Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries, is pleased to announce a multi-year multi-million dollar epitaxial wafer supply contract with a US Fortune 500 scientific instruments and network equipment manufacturing company. IntelliEPI will provide dedicated MBE services to produce
By admin - On 16 Feb, 2012 - 0 comments
IntelliEPI has kicked off the new large diameter GaSb substrate task under a US DoD funded program. This is a multi-year extensive project for IntelliEPI to develop 4in and larger diameter GaSb crystal pulling technology and to improve epi-ready wafer polishing technique with high flatness. IntelliEPI plans to use its new facility in Allex, Texas
By admin - On 01 Dec, 2011 - 0 comments
IntelliEPI has received a new, state-of-the-art 7×6 inch Molecular Beam Epitaxy (MBE) system from Riber, ISA. This machine will strengthen IntelliEPI’s position for pHEMT production and gives future flexibility for upgrading and overhauling other MBE systems for P-based and Sb-based MBE growth.
By admin - On 12 Aug, 2011 - 0 comments
IntelliEPI is pleased to announce that, after a kick-off meeting in June, a multi-million dollar contract was signed this month with the US DoD to develop next generation state-of-the-art IR sensor material for thermal imaging applications. The contract will run through August, 2014.
By admin - On 01 Jul, 2011 - 0 comments
IntelliEPI is pleased to announce that it has opened a new 8,500 square-foot facility in Allen, Texas containing a class-100 clean room and well maintained lab space. This facility will be used for large diameter GaSb crystal pulling, high flatness GaSb epi-ready wafer polishing, and future production MBE equipment hosting. This new facility will provide
By admin - On 10 Feb, 2011 - 0 comments
Intelligent Epitaxy Technology, Inc. (IntelliEPI, Inc) received the 2010 Supplier Award from Skyworks Solutions Inc. for supply of pHEMT (pseudomorphic high mobility transistor) epi-wafers to Skyworks’ Woburn, Ma. wafer fab. The award was presented to IntelliEPI during Skyworks’ Supplier Day Conference, held January 11 in Newport Beach, Ca. This is IntelliEPI’s first award in this