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Jan 13, 2014 IET Taipei Office Relocation

By admin  -  On 09 Jan, 2014 -  0 comments

Due to end of lease, IET Taipei office is moving to its new location: Address: 5F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.) 台北市士林區德行西路33號5樓 Telphone: 02-2837-1206 Fax: 02-2837-1606

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By admin  -  On 12 Dec, 2013 -  0 comments

Bernin (Grenoble), France, and Richardson, Texas, December 12, 2013 — Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Intelligent Epitaxy Technology, Inc. (IntelliEPI, GTSM Taiwan: F-IET #4971), a leader in providing indium phosphide (InP), gallium arsenide (GaAs), and gallium antimonide (GaSb) epitaxial wafers to

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Aug 1, 2012 Multi-year, Multi-Million Dollar Epitaxial Wafer Supply Contract with a Major US High Frequency Instruments Manufacturer

By admin  -  On 01 Aug, 2012 -  0 comments

Intelligent Epixtaxy Technology, Inc. (IntelliEPI), a leader in providing Indium Phosphide (InP) and Gallium Arsenide (GaAs) epitaxial wafers to electronics and optoelectronics industries, is pleased to announce a multi-year multi-million dollar epitaxial wafer supply contract with a US Fortune 500 scientific instruments and network equipment manufacturing company. IntelliEPI will provide dedicated MBE services to produce

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Feb 16, 2012 GaSb Substrate Development Program

By admin  -  On 16 Feb, 2012 -  0 comments

IntelliEPI has kicked off the new large diameter GaSb substrate task under a US DoD funded program. This is a multi-year extensive project for IntelliEPI to develop 4in and larger diameter GaSb crystal pulling technology and to improve epi-ready wafer polishing technique with high flatness. IntelliEPI plans to use its new facility in Allex, Texas

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Dec 1, 2011 New MBE System

By admin  -  On 01 Dec, 2011 -  0 comments

IntelliEPI has received a new, state-of-the-art 7×6 inch Molecular Beam Epitaxy (MBE) system from Riber, ISA. This machine will strengthen IntelliEPI’s position for pHEMT production and gives future flexibility for upgrading and overhauling other MBE systems for P-based and Sb-based MBE growth.

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Aug 12, 2011 Thermal Imaging Development Program

By admin  -  On 12 Aug, 2011 -  0 comments

IntelliEPI is pleased to announce that, after a kick-off meeting in June, a multi-million dollar contract was signed this month with the US DoD to develop next generation state-of-the-art IR sensor material for thermal imaging applications. The contract will run through August, 2014.

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July 1, 2011 New Facility Expansion in Allen, TX

By admin  -  On 01 Jul, 2011 -  0 comments

IntelliEPI is pleased to announce that it has opened a new 8,500 square-foot facility in Allen, Texas containing a class-100 clean room and well maintained lab space. This facility will be used for large diameter GaSb crystal pulling, high flatness GaSb epi-ready wafer polishing, and future production MBE equipment hosting. This new facility will provide

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Feb 10, 2011 IntelliEPI Receives Supplier Award

By admin  -  On 10 Feb, 2011 -  0 comments

Intelligent Epitaxy Technology, Inc. (IntelliEPI, Inc) received the 2010 Supplier Award from Skyworks Solutions Inc. for supply of pHEMT (pseudomorphic high mobility transistor) epi-wafers to Skyworks’ Woburn, Ma. wafer fab. The award was presented to IntelliEPI during Skyworks’ Supplier Day Conference, held January 11 in Newport Beach, Ca. This is IntelliEPI’s first award in this

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Nov 22, 2010 Intelligent Epitaxy Technology, Inc announces Technical Support Center in Japan

By admin  -  On 22 Nov, 2010 -  0 comments

Intelligent Epitaxy Technology, Inc. (IntelliEPI, Inc) today announced that it has setup a Technical Support Center in Japan (IntelliEPI Japan, Ltd.) to support increasing demand for its products in Japan from his global customers. “Nowadays, it is common for our global customers to make procurement in US and take delivery for production in Japan. IntelliEPI

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