Publications

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GaAsSb-Based HBTS Grown By Production MBE System International Conference on Indium Phosphide and Related Materials (IPRM ’04) [PDF]
Ultra low background InGaAs Epi-layer on InP for PIN applications by production MBE International Conference on Indium Phosphide and Related Materials (IPRM ’04) [PDF]
InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM) Journal of Crystal Growth 251 (2003) p.124-29 [PDF]
Production InP based MBE HBT Growth and Improvement with Real-Time Monitoring Y.C. Kao, P. Pinsukanjana, J.R. Thomason, K. Vargason, and K. Lee [PDF]
(Abstract) MBE, Production Ready? Sensor Based MBE for PHEMT Growth Presented by: Yung-Chung Kao and Paul Pinsukanjana [PDF]
MBE, Production Ready? Sensor Based MBE for PHEMT Growth Presented by Dr. Yung-Chung Kao, President/CEO [PDF]
Title Source File
Novel gate-recessed vertical InAs/GaSb TFETs with record high ION
of 180 μA/μm at VDS = 0.5 V
IEEE IEDM Tech. Dig., p. 32.6.1, (2012) [PDF]
E-mode Planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2
(EOT = 0.8 nm) Composite Insulator
IEEE IEDM Tech. Dig., p. 32.2.1, (2012) [PDF]
High-power distributed Bragg reflector lasers operating at 1065nm ELECTRONICS LETTERS Volume 43.,No. 14 (2007) [PDF]
12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710 GHz and fMAX=340 GHz APPLIED PHYSICS LETTERS 87, 252109 (2005) [PDF]
InP/InGaAs SHBTs with 75nm collector and fT>500 GHz Electron Device Letters, IEEE. October 2003, p.384- 386. Volume 29, Issue 30 [PDF]
Vertical scaling of 0.25-/spl mu/ emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz Electron Device Letters, IEEE. July 2003, p.436-38. Volume 24, Issue 7 [PDF]
Low-Power High-Speed Operation of Submicron InP�InGaAs SHBTs at 1mA Electron Device Letters, IEEE. July 2003, p.427-29. Volume 24, Issue 7 [PDF]
Ultra high-speed InP-InGaAs SHBTs with f/sub max/ of 478 GHz Electron Device Letters, IEEE. June 2003, p.384-86. Volume 24, Issue 6 [PDF]
Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz Electron Device Letters, IEEE. May 2003, p.292-94. Volume 24, Issue 5 [PDF]

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