| Title | Source | File |
| GaAsSb-Based HBTS Grown By Production MBE System | International Conference on Indium Phosphide and Related Materials (IPRM ’04) | [PDF] |
| Ultra low background InGaAs Epi-layer on InP for PIN applications by production MBE | International Conference on Indium Phosphide and Related Materials (IPRM ’04) | [PDF] |
| InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM) | Journal of Crystal Growth 251 (2003) p.124-29 | [PDF] |
| Production InP based MBE HBT Growth and Improvement with Real-Time Monitoring | Y.C. Kao, P. Pinsukanjana, J.R. Thomason, K. Vargason, and K. Lee | [PDF] |
| (Abstract) MBE, Production Ready? Sensor Based MBE for PHEMT Growth | Presented by: Yung-Chung Kao and Paul Pinsukanjana | [PDF] |
| MBE, Production Ready? Sensor Based MBE for PHEMT Growth | Presented by Dr. Yung-Chung Kao, President/CEO | [PDF] |
| Highly Uniform VCSELs Grown by Multi-wafer Production MBE | Presented by Juan Li, Shannon M. Hill, Joseph A. Middlebrooks, Cheng-Yu Chen, Wei Li, Jenn-Ming Kuo, Kevin W. Vargason, Yung-Chung Kao and Paul R. Pinsukanjana , CS Mantech Conference, 2018, Austin, TX, USA | [PDF] |
| Title | Source | File |
| Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V |
IEEE IEDM Tech. Dig., p. 32.6.1, (2012) | [PDF] |
| E-mode Planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) Composite Insulator |
IEEE IEDM Tech. Dig., p. 32.2.1, (2012) | [PDF] |
| High-power distributed Bragg reflector lasers operating at 1065nm | ELECTRONICS LETTERS Volume 43.,No. 14 (2007) | [PDF] |
| 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710 GHz and fMAX=340 GHz | APPLIED PHYSICS LETTERS 87, 252109 (2005) | [PDF] |
| InP/InGaAs SHBTs with 75nm collector and fT>500 GHz | Electron Device Letters, IEEE. October 2003, p.384- 386. Volume 29, Issue 30 | [PDF] |
| Vertical scaling of 0.25-/spl mu/ emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz | Electron Device Letters, IEEE. July 2003, p.436-38. Volume 24, Issue 7 | [PDF] |
| Low-Power High-Speed Operation of Submicron InP�InGaAs SHBTs at 1mA | Electron Device Letters, IEEE. July 2003, p.427-29. Volume 24, Issue 7 | [PDF] |
| Ultra high-speed InP-InGaAs SHBTs with f/sub max/ of 478 GHz | Electron Device Letters, IEEE. June 2003, p.384-86. Volume 24, Issue 6 | [PDF] |
| Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz | Electron Device Letters, IEEE. May 2003, p.292-94. Volume 24, Issue 5 | [PDF] |
| 1024×1024 LWIR SLS FPAs – Status and Characterization | Publication by Qmagiq.net | [PDF] |
| Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation | Infrared Phys. Technol. (2012), doi:10.1016/j.infrared.2012.01.002 | [PDF] |
| A CMOS-Compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs | CS MANTECH Conference, May 18th – 21st, 2015, Scottsdale, Arizona, USA | [PDF] |
| Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor | CS MANTECH Conference, May 18th – 21st, 2015, Scottsdale, Arizona, USA | [PDF] |
| A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs | Vardi, A. et al. “A Si Compatible Fabriacaton Process for ScaledSelf-Aligned InGaAs FinFets.” IEEE Transactions on SemiconductorManufacturing, 30, 4 (November 2017): 468 – 474 © 2017 IEEE | [PDF] | InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers | THESIS FOR THE DEGREE OF LICENTIATE OF ENGINEERING, 2018 | [PDF] |