IntelliEPI has kicked off the new large diameter GaSb substrate task under a US DoD funded program. This is a multi-year extensive project for IntelliEPI to develop 4in and larger diameter GaSb crystal pulling technology and to improve epi-ready wafer polishing technique with high flatness. IntelliEPI plans to use its new facility in Allex, Texas
IntelliEPI has received a new, state-of-the-art 7×6 inch Molecular Beam Epitaxy (MBE) system from Riber, ISA. This machine will strengthen IntelliEPI’s position for pHEMT production and gives future flexibility for upgrading and overhauling other MBE systems for P-based and Sb-based MBE growth.
IntelliEPI is pleased to announce that, after a kick-off meeting in June, a multi-million dollar contract was signed this month with the US DoD to develop next generation state-of-the-art IR sensor material for thermal imaging applications. The contract will run through August, 2014.
IntelliEPI is pleased to announce that it has opened a new 8,500 square-foot facility in Allen, Texas containing a class-100 clean room and well maintained lab space. This facility will be used for large diameter GaSb crystal pulling, high flatness GaSb epi-ready wafer polishing, and future production MBE equipment hosting. This new facility will provide
Intelligent Epitaxy Technology, Inc. (IntelliEPI, Inc) received the 2010 Supplier Award from Skyworks Solutions Inc. for supply of pHEMT (pseudomorphic high mobility transistor) epi-wafers to Skyworks’ Woburn, Ma. wafer fab. The award was presented to IntelliEPI during Skyworks’ Supplier Day Conference, held January 11 in Newport Beach, Ca. This is IntelliEPI’s first award in this
Intelligent Epitaxy Technology, Inc. (IntelliEPI, Inc) today announced that it has setup a Technical Support Center in Japan (IntelliEPI Japan, Ltd.) to support increasing demand for its products in Japan from his global customers. “Nowadays, it is common for our global customers to make procurement in US and take delivery for production in Japan. IntelliEPI
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