IntelliEPI

Material information press release about share exchange between IET and EZconn Corporation.

Wayne Wang — Thu, 04 Dec 2025 19:51:00 +0000

IntelliEPI Inc.（Cayman）(IET, TPEx: 4971) and EZconn Corporation (EZconn,TWSE: 6442) today (December 4, 2025) announced that their respective Boards of Directors have approved a strategic share exchange transaction intended to strengthen the companies’ long-term strategic partnership. Under the approved structure, both parties will subscribe to newly issued shares of the counterparty through capital increases. The agreed exchange ratio is 5.1 shares of IET common stock for 1 share of EZconn common stock. Upon completion of the transaction, IET will hold approximately 1.79% of the total common shares in EZconn, and EZconn will hold approximately 15.26% of the total common shares in IET. IET specializes in the research, development, and production of III-V compound semiconductor epitaxial wafers using proprietary Molecular Beam Epitaxy (MBE) technology. Its products, including Indium Phosphide (InP), Gallium Arsenide (GaAs), and Gallium Antimonide (GaSb), are widely utilized in high-speed optical communication, wireless communication, defense sensing, and quantum computing. EZconn is a globally recognized manufacturer of optical communication components and high-frequency connectors, covering active optical components, passive optical components, and RF high-frequency connectors. EZconn is a key supplier of optical components for large-scale data centers and has recently intensified its focus and technological development in the field of Silicon Photonics (SiPh) and Co-Packaged Optics (CPO). This share-exchange alliance marks a significant milestone as IET extends its position from an upstream epitaxial material supplier into the mid- and downstream optical component and module sectors. This vertical integration will accelerate strategic deployment in the AI data center and SiPh sectors. Leveraging InP Leadership to Seize AI Data Center Opportunities Amid rapid transformation driven by AI computing demand, IET maintains a world-leading position in MBE epitaxy—particularly in InP HBT and high-speed PIN/APD products. EZconn, as a key supplier of optical passive components to global data centers, offers IET direct access to end-customer specifications, enabling shorter development cycles, faster product iteration, and accelerated commercialization. Through deeper vertical integration, IET will gain clearer visibility into system-level performance requirements, significantly enhancing its ability to address next-generation high-speed optical applications. Moreover, IET will benefit from EZconn’s extensive customer base and longstanding presence across data centers, 5G communications, networking infrastructure, low- earth-orbit satellites, aerospace, and defense. This collaboration broadens IET’s routes to market and scales its operational capacity. As demand for InP epitaxy continues to grow in AI-driven data center infrastructure, EZconn’s entrenched market position will allow IET to capture a greater share of the high-speed epitaxial wafer market. Jointly Pioneering the Next Generation of CPO Technology Looking further ahead to next-generation Co-Packaged Optics (CPO) technology, the two companies will engage in deep technical collaboration. By integrating IET’s high-performance laser epitaxy with EZconn’s precision optical engineering capabilities,the companies aim to jointly deliver end-to-end silicon photonics CPOsolutions—from epitaxial growth to module-level integration—positioning themselves to capture substantial opportunities in AI-era CPO and high-frequency,high-speed applications. Taishin Securities’ Capital Markets Division is appointed as the exclusive financial advisor for this share swap, providing strategic planning, structural design, and transaction support to facilitate smooth execution. Following the completion of the share-swap alliance, IET and EZconn will become long-term strategic partners, leveraging their complementary strengths to enhance operational performance and create long-term shareholder value.

IntelliEPI Secures $4.12 Million Grant from Texas Semiconductor Innovation Fund to Bolster Compound Wafer Semiconductor Manufacturing and Innovation in Texas

Wayne Wang — Fri, 22 Nov 2024 15:10:58 +0000

**Allen, Texas — November 14, 2024** –
       Intelligent Epitaxy Technology, Inc. (IntelliEPI), a leading manufacturer of high performance III-V compound semiconductor epitaxy wafers, is pleased to announce that the company has been awarded a $4.12 million grant from the Texas Semiconductor Innovation Fund (TSIF). The funding from TSIF shall be used in a capacity expansion project. This significant of keeping this project in Texas underscores IntelliEPI’s commitment to help the state of Texas retain its pivotal role in high performance compound semiconductor wafer manufacturing and future advanced technology and innovation in the United States and the world.
       The Texas Semiconductor Innovation Fund (TSIF) is a new incentive program of nearly $700M to encourage the continued leadership of Texas in semiconductor research, design and manufacturing. The TSIF was established in June 2023 when Governor Abbott signed into law the Texas CHIPS Act (House Bill 5174) which established the TSIF as well as the Texas Semiconductor Innovation Consortium (TSIC). This funding initiative aligns closely with IntelliEPI’s mission to advance the semiconductor industry through groundbreaking technology and sustainable manufacturing processes.
       This $4.12 million grant shall be used by IntelliEPI to enhance and accelerate the construction of a new expansion annex next to the existing facility in Allen, TX. This new facility will increase both the manufacturing capacity and the ability to conduct further advanced research and development, all critical to accelerate the production of high-performance epitaxy wafers and implement the next-generation semiconductor device manufacturing processes. These efforts are expected to have broad implications for industries ranging from aerospace and defense to telecommunications and automotive, all of which rely heavily on state-of-the-art compound semiconductor wafer technologies to drive innovation and maintain competitive advantage.
       “This grant from the Texas Semiconductor Innovation Fund represents a significant milestone for IntelliEPI and validates our strategic focus on technological innovation, high-quality manufacturing, and sustainable growth within the semiconductor industry,” said Yung-Chung Kao, CEO and Chairman of the Board of IntelliEPI. “We are excited to play a role in advancing Texas as a central player in the compound wafer manufacturing industry and continue to shift more of the supply chain within the United States.”

**About IntelliEPI**

Intelligent Epitaxy Technology, Inc. (IntelliEPI), locating in the Dallas-Fort Worth (DFW) Metroplex is a leading provider of epitaxy wafers for advanced compound semiconductor applications. The company specializes in the crystal growth of high-quality compound semiconductor epitaxy wafers based on an advanced production Molecular Beam Epitaxy technology platform. IntelliEPI serves a global clientele in markets spanning defense, telecommunications, automotive, and more. The company is dedicated to fostering innovation, ensuring quality, and leading advancements in semiconductor technology.

**Contact Information:**
For more information, please contact:
Tina Ding
Senior Accountant/HR manager
Intelligent Epitaxy Technology, Inc.
Phone: (972) 234-0068 ext. 267
Email: info@intelliepi.com

RIBER and IntelliEPI have qualified the MBE 8000 performance

Wayne Wang — Thu, 22 Jun 2023 17:56:36 +0000

• State-of-the-art laser emission resolution, 3 nm, for VCSEL applications market
• Extremely high thickness and doping uniformities across 8x6in or 4x8in wafers run
• Final qualification expected by 4th quarter for high volume optoelectronic and micro-electronic applications
Bezons (France), June 14, 2023 – 5:45pm (CET) – RIBER, the global leader for molecular beam epitaxy (MBE) equipment serving the semiconductor industry, is announcing major milestones in the joint development program with IntelliEPI for the qualification of the new MBE 8000 production platform.

As the new Riber’s flagship, the MBE 8000 is the highest capacity MBE production tool available on the market, able to handle batches of eight 150 mm (6 inches) or four 200 mm (8 inches) wafers. The design of this machine benefits from over 20 years’ experience in production MBE systems running daily around the world and enabling outstanding process performances and stability, thus reducing their cost of ownership.
Following the delivery of the first MBE 8000 platform and after a thorough qualification work carried out in close cooperation with IntelliEPI, the results obtained have exceeded the expectations for such technology, particularly in terms of uniformities, defect densities, increasing yield, and interface abruptness, which is key for superlattices structures to achieve high performance lasers.
Those performances combined with a high level of run-to-run repeatability control in large-scale production will enable new generation lasers, in particular for the fast-growing VCSEL (vertical-cavity surface-emitting laser) technology with significant market opportunities in the field of smartphone under display facial recognition.
In its latest report on VCSEL, Yole Group specified: a “major change expected is a shift in wavelength from 940 to 1,380nm (…)to achieve an integration of the VCSELs behind organic light emitting diode (OLED) displays, which are transparent at this wavelength. The first application could be the proximity sensor being placed under the display (…).” (source)
On top of the VCSEL market, the precise control of the doping uniformity and the processes stability offered by the MBE 8000 platform will also enhance microelectronic device performances, such as conductivity.
Over the past few months, as results were disclosed to several industrial customers, interest for this machine as grown quickly, leading to discussions for potential purchase.
According to Yung-Chung Kao, IntelliEPI President and CEO, “From the initial evaluation so far, this Riber MBE 8000 has shown very impressive performance in terms of being able to produce high quality epi materials over such a large substrate platen area with excellent composition and thickness uniformity across the 8×6” platen. With this improvement, the MBE 8000 platform offers a solution to make large-scale production MBE technology more competitive especially for high performance and high throughput market opportunities
Christian Dupont, Riber’s CEO : ”Thanks to the efforts of Riber and IntelliEPI teams, we have reached a major step for MBE 8000 qualification. The results provided by the machine exceed our initial objectives. With an optimum cost of ownership and large capacity the MBE 8000 equipment has strong commercial prospects. In addition, our milestone in this joint development program with IntelliEPI demonstrates the capability to bring MBE technology in high volume semiconductor industry. ”

Source from: https://www.riber.com/financial_documents/riber-et-intelliepi-qualifient-la-performance-du-mbe-8000/
Related News:
https://www.semiconductor-today.com/news_items/2023/jun/riber-intelliepi-150623.shtml
https://compoundsemiconductor.net/article/116952/Setting_new_standards_for_MBE_

May 29, 2023 Semiconductors Compound Semiconductor Week (CSW) 2023- a plenary talk

Wayne Wang — Tue, 06 Jun 2023 16:02:41 +0000

Hybrid Epitaxy – A New Epi-model to Support III-V Semiconductors

This presentation described the evolution of epi-foundries from early day traditional merchant single source epitaxy services to nowadays hybrid epitaxy model with not only epi-tools integration but also the addition of regrowth and post-growth metallization steps to the epi-device structures. Since III-V semiconductors in particular have the highest level in epi-layers maturity and complexity, we focus our discussion using III-V epi-devices.

Molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) are two most important modern epitaxy techniques that used extensively to prepare epi-wafers for III-V semiconductor electronic/optoelectronic devices. Most of the foundries were formed about 25 to 35 years ago, during the early part of the mobile phone era. The merchant epi-foundries bought either MBE or MOCVD equipment, now up to 8x6in multiwafer production configuration, from a handful of equipment manufacturers and to supply custom designed, tightly specified, epitaxial films on either GaAs or InP substrates for a variety of customers. In this type of service, epitaxial design come from the customer and the epi-foundry then converts the customer’s design into overlaying epitaxial films on one or multiple substrates using either MBE or MOCVD apparatus. As-grown epi-wafers characterization is done to ensure successful completion of the job. And wafers are delivered to customers or IC foundries for processing and fabrication. Up to date, almost all the advanced and mature III-V compound semiconductors devices are prepared on II-V epitaxial wafers.

Since every epi-technique has its limitations and no single growth machine can be configured with all the species. There are also apparent risks of cross contamination if certain species are used in the same chamber. In other words, each epitaxial tool’s configuration, various epi-layers attributes (control of thickness, composition, and doping range), and interface quality between layers, determine the epitaxial devices performance upper limits. As all the dataintensive applications in communication networks demand ever higher bandwidth and capacity, the performance requirements on all optoelectronics and RF devices are almost pushed beyond what current epi-tools can provide. In order to reach higher power, efficiency, and speed, epitaxial industry needs to expand it capabilities and relax the restrictions to support the 5G, and beyond. We discussed the following epitaxial combination possibilities, or called hybrid epitaxy, that are either established at our facilities or under proposition to be included:

• MOCVD & MBE growth combination: Dilute-nitride QW VCSEL, quantum dot QW Laser
• Epitaxy processing & re-growth: VCSEL with tunnel junction, MBE n+GaN on MOCVD GaN HEMT
• Inter-systems linkage: UHV inter-connection of As/P MBE system with As/Sb/N MBE system; MBE and MOCVD
• MBE systems with in situ sensors installed for monitoring and control
• MBE UHV linkage to processing chamber: post InP HBT epi-growth in situ metallization, pre epitaxial growth hydrogen cleaning
• Cluster tool connection to many single wafer MBE/MOCVD chambers: for 200mm & 300mm GaN/Si

In this talk, we used various device structures prepared under hybrid epitaxy to illustrate the feasibility to push device performance to higher limits without substantially increase in cost. The fundamental tools used are still MBE and MOCVD. The hardware linkage tools and various techniques used to protect and/or to clean the interface, respectively, was be discussed in the presentation.

Sep. 2021:IntelliEPI and IVWorks signed a Joint development agreement (JDA)

Wayne Wang — Mon, 20 Dec 2021 22:23:23 +0000

IntelliEPI and IVWorks signed a JDA upon a successful factory inspection to IntelliEPI in September, 2021.

In the agreement, both companies committed to strengthen the collaboration in the successful demonstration of GaN growth in large format MBE systems, sharing epitaxial material capabilities, and market development. The modified 7×6” MBE system was successfully shipped to Korea by the end of November and is scheduled to be set up in the beginning of 2022.

Sep. 10, 2021: RBA VAP Recognition

Wayne Wang — Thu, 16 Dec 2021 16:18:54 +0000

IntelliEPI is committed to Corporate Social Responsibility (CSR) that is based on and consistent with the Responsible Business Alliance (RBA, formerly EICC) Code of Conduct, which establishes standards designed to ensure that working conditions are safe, that workers are treated with respect and dignity, and that business operations are environmentally responsible and conducted ethically.

As evidence of our commitment to CSR, IntelliEPI is pleased to share the results of our recent RBA Validated Assessment Program (VAP). IntelliEPI achieved Gold recognition for scoring above 183 out of a possible 200 points. This was made possible through strong partnership with our customers and suppliers, and contributions throughout the IntelliEPI organization. While proud of this accomplishment, work remains to stay vigilant and continue improving.

Oct 15, 2020 IET Taipei Office Relocation

Wayne Wang — Mon, 13 Dec 2021 23:11:37 +0000

Due to end of lease, IET Taipei office is moving to its new location:

Address:
6F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.)
台北市士林區德行西路33號6樓

Telphone： 02-2837-1206
Fax: 02-2837-1606

Aug 18, 2020 Joint partnership announcement between IVWorks Co., Ltd. (IVWorks) and Intelligent Epitaxy Technology, Inc. (IntelliEPI) on the technology and business development for GaN epi materials based on molecular beam epitaxy (MBE) technology.

Wayne Wang — Tue, 18 Aug 2020 06:20:48 +0000

This is a joint partnership announcement between IVWorks Co., Ltd. (IVWorks) and Intelligent Epitaxy Technology, Inc. (IntelliEPI) on the technology and business development for GaN epi materials based on molecular beam epitaxy (MBE) technology. The two companies have been collaborating closely on the development of production scale of GaN epi wafers by MBE since 2018. The framework of technical and marketing alliances was formalized in 2019.

GaN/Si (up to 200mm) and GaN/SiC (up to 150mm) are now available for evaluation.

IVWorks, an innovative start-up company that utilizes Hybrid-MBE technology to produce high-quality GaN epi-wafers, has developed a machine learning-based artificial intelligence (AI) epitaxy system “DommTM”, dramatically improving the productivity and scalability. Hybrid-MBE growth is performed with a hybrid nitrogen source of ammonia and plasma for optimal quality and high growth rate. In addition, DommTM, the IVWorks’ AI technology, uses a deep learning algorithm to detect and analyze reflection high energy electron diffraction (RHEED) patterns, which can monitor crystal growth at the atomic level during MBE growth in real-time. Furthermore, a prediction model is created by learning the validity and correlation of the dataset that integrates classified RHEED patterns, growth conditions, and quality results of the epiwafers. This prediction model can be applied to epiwafer manufacturing to maximize productivity.

IntelliEPI specializes in As, P, and Sb based MBE epi wafer production as well as GaSb substrates manufacturing. Its products include a wide range of electrical and optical device epitaxy wafers. IntelliEPI will leverage its strength in high volume MBE production, equipment modification, and component manufacturing to quickly bring GaN to its product line.

Dr. Young-kyun Noh, IVWorks’ CEO, comments: “We are excited by the opportunities that will result from this partnership. By partnering with MBE epi wafer production experts such as IntelliEPI, we will accelerate the role we play in supplying high quality GaN epi-wafers to the global semiconductor industry through the revolutionary AI manufacturing system, while enhancing market penetration and response. Thanks to IntelliEPI’s long experience of compound semiconductor epi wafer business and large-scale production, we will be able to significantly strengthen competitiveness for the GaN epi business.”

Dr. Yung-Chung Kao, IntelliEPI’s President and CEO, comments: “This partnership will advance MBE GaN growth by combining AI technology from IVWorks and IntelliEPI’s large-scale production MBE growth capabilities and related equipment expertise. IntelliEPI will work closely with IVWorks to develop a global business based on MBE GaN technology for RF and power device markets.”

IVWorks’ 200mm GaN HFET on Si epi-wafer

IVWorks Co., Ltd. (IVWorks), which manufactures GaN epitaxial wafers by using the deep learning-based AI epitaxy technology, was established in 2011 in Daejeon, South Korea to supply GaN epi wafers to the RF and power electronics industries. The company is currently manufacturing 100 mm to 200 mm GaN epi wafers by using three production MBE systems.
Website: www.ivwkr.com.

Intelligent Epitaxy Technology, Inc. (IntelliEPI), was established in 1999 in Richardson, Texas to supply epitaxy-based compound semiconductor epi wafers to the electronics and optoelectronics industries. The company utilizes its proprietary real-time in-situ growth monitoring technology on MBE systems for the manufacturing of epi wafers on GaAs, InP, GaSb and other substrates. Along with IntelliEPI’s extensive experience in MBE material growth technology, the company owns three U.S. patents on real-time in situ growth sensor technology. For more information, visit: http://www.intelliepi.com.

June 28, 2020 Received Government funding for the development of GaN on Si for automotive power device application.

Wayne Wang — Mon, 17 Aug 2020 22:36:31 +0000

We recently received Government funding for the development of GaN on Si for automotive power device application. This is to support the growing electric vehicle (EV) market. GaN/Si power device offers a technology pathway to meet the cost and performance target necessary for widespread market adoption. For this effort, we plan to develop high quality GaN/Si HEMT epi wafers utilizing advanced production MBE technology platform. We will also work closely with our industrial partners to demonstrate the feasibility to mass-produce GaN on Si substrates (150 mm or larger) power devices for EV applications.

Sept 29, 2014 ACQUISITION BY INTELLIEPI OF THE GALLIUM ARSENIDE (GaAs) EPITAXY BUSINESS FROM SOITEC’S SPECIALTY ELECTRONICS SUBSIDIARY

admin — Mon, 29 Sep 2014 00:32:49 +0000

Bernin (Grenoble), France, and Richardson, Texas, September 29th, 2014 — Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, is today announcing the sale of the gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics subsidiary to Intelligent Epitaxy Technology Inc. (IntelliEPI, GTSM Taiwan: F-IET 4971#), a leader in providing indium phosphide (InP), gallium arsenide (GaAs), and gallium antimonide (GaSb) epitaxial wafers to the electronics and optoelectronics industries. The subsidiary is based in France, at the Villejust site (Essonne department).

The deal follows the previous collaboration between Soitec and IntelliEPI (see press release dated December 12, 2013) .

“The transaction will enable IntelliEPI to widen its customer base and penetrate to several critical GaAs application markets such as automotive radar technology. It will also enable IntelliEPI to provide best-valued products and services to all its customers with expanded manufacturing capacities from its Texas, USA location” said Yung-Chung Kao, IntelliEPI President and CEO.

“The sale of our gallium arsenide (GaAs) epitaxy business to IntelliEPI reflects our drive to refocus Soitec’s electronics division on its key products under its five-year Soitec 2015 program” explained Bernard Aspar,Senior Vice President and Soitec’s Communication & Power Business Unit General Manager.

About IntelliEPI: Intelligent Epitaxy Technology, Inc. (IntelliEPI) was established in 1999 in Richardson, Texas, to supply epitaxy-based compound semiconductor epi wafers to the electronics and optoelectronics industries. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi wafers on GaAs and InP substrates. Along with IntelliEPI’s extensive experience in MBE processing, the company owns three U.S. patents on real-time in situ growth sensor technology. For more information, visit: http://www.intelliepi.com.

Investor Relations –US
George Wang
972-234-0068 x 106
investors@intelliepi.com

Investor Relations-Taiwan
Orson Fan
(02) 2837-1206 x 103
orson.fan@intelliepi.com

About Soitec: Soitec is an international manufacturing company, a world leader in generating and manufacturing revolutionary semiconductor materials at the frontier of the most exciting energy and electronic challenges. Soitec’s products include substrates for microelectronics (most notably SOI: silicon-on-insulator) and concentrator photovoltaic systems (CPV). The company’s core technologies are Smart Cut™, Smart Stacking™ and Concentrix™, as well as expertise in epitaxy. Applications include consumer and mobile electronics, microelectronics-driven IT, telecommunications, automotive electronics, lighting products and large-scale solar power plants. Soitec has manufacturing plants and R&D centers in France, Singapore, Germany and the United States. For more information, visit: www.soitec.com.

International Media Contacts
(trade press)
Camille Dufour
+33 (0)6 79 49 51 43
camille.dufour@soitec.

Investor Relations
Olivier Brice
+33 (0)4 76 92 93 80
olivier.brice@soitec.com

(business press)
Marylen Schmidt
+33 (0)6 21 13 66 72
marylen.schmidt@soitec.com