Material information press release about share exchange between IET and EZconn Corporation.

Wayne Wang — Thu, 04 Dec 2025 19:51:00 +0000

IntelliEPI Inc.（Cayman）(IET, TPEx: 4971) and EZconn Corporation (EZconn,TWSE: 6442) today (December 4, 2025) announced that their respective Boards of Directors have approved a strategic share exchange transaction intended to strengthen the companies’ long-term strategic partnership. Under the approved structure, both parties will subscribe to newly issued shares of the counterparty through capital increases. The agreed exchange ratio is 5.1 shares of IET common stock for 1 share of EZconn common stock. Upon completion of the transaction, IET will hold approximately 1.79% of the total common shares in EZconn, and EZconn will hold approximately 15.26% of the total common shares in IET. IET specializes in the research, development, and production of III-V compound semiconductor epitaxial wafers using proprietary Molecular Beam Epitaxy (MBE) technology. Its products, including Indium Phosphide (InP), Gallium Arsenide (GaAs), and Gallium Antimonide (GaSb), are widely utilized in high-speed optical communication, wireless communication, defense sensing, and quantum computing. EZconn is a globally recognized manufacturer of optical communication components and high-frequency connectors, covering active optical components, passive optical components, and RF high-frequency connectors. EZconn is a key supplier of optical components for large-scale data centers and has recently intensified its focus and technological development in the field of Silicon Photonics (SiPh) and Co-Packaged Optics (CPO). This share-exchange alliance marks a significant milestone as IET extends its position from an upstream epitaxial material supplier into the mid- and downstream optical component and module sectors. This vertical integration will accelerate strategic deployment in the AI data center and SiPh sectors. Leveraging InP Leadership to Seize AI Data Center Opportunities Amid rapid transformation driven by AI computing demand, IET maintains a world-leading position in MBE epitaxy—particularly in InP HBT and high-speed PIN/APD products. EZconn, as a key supplier of optical passive components to global data centers, offers IET direct access to end-customer specifications, enabling shorter development cycles, faster product iteration, and accelerated commercialization. Through deeper vertical integration, IET will gain clearer visibility into system-level performance requirements, significantly enhancing its ability to address next-generation high-speed optical applications. Moreover, IET will benefit from EZconn’s extensive customer base and longstanding presence across data centers, 5G communications, networking infrastructure, low- earth-orbit satellites, aerospace, and defense. This collaboration broadens IET’s routes to market and scales its operational capacity. As demand for InP epitaxy continues to grow in AI-driven data center infrastructure, EZconn’s entrenched market position will allow IET to capture a greater share of the high-speed epitaxial wafer market. Jointly Pioneering the Next Generation of CPO Technology Looking further ahead to next-generation Co-Packaged Optics (CPO) technology, the two companies will engage in deep technical collaboration. By integrating IET’s high-performance laser epitaxy with EZconn’s precision optical engineering capabilities,the companies aim to jointly deliver end-to-end silicon photonics CPOsolutions—from epitaxial growth to module-level integration—positioning themselves to capture substantial opportunities in AI-era CPO and high-frequency,high-speed applications. Taishin Securities’ Capital Markets Division is appointed as the exclusive financial advisor for this share swap, providing strategic planning, structural design, and transaction support to facilitate smooth execution. Following the completion of the share-swap alliance, IET and EZconn will become long-term strategic partners, leveraging their complementary strengths to enhance operational performance and create long-term shareholder value.

Sept 29, 2014 ACQUISITION BY INTELLIEPI OF THE GALLIUM ARSENIDE (GaAs) EPITAXY BUSINESS FROM SOITEC’S SPECIALTY ELECTRONICS SUBSIDIARY

admin — Mon, 29 Sep 2014 00:32:49 +0000

Bernin (Grenoble), France, and Richardson, Texas, September 29th, 2014 — Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, is today announcing the sale of the gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics subsidiary to Intelligent Epitaxy Technology Inc. (IntelliEPI, GTSM Taiwan: F-IET 4971#), a leader in providing indium phosphide (InP), gallium arsenide (GaAs), and gallium antimonide (GaSb) epitaxial wafers to the electronics and optoelectronics industries. The subsidiary is based in France, at the Villejust site (Essonne department).

The deal follows the previous collaboration between Soitec and IntelliEPI (see press release dated December 12, 2013) .

“The transaction will enable IntelliEPI to widen its customer base and penetrate to several critical GaAs application markets such as automotive radar technology. It will also enable IntelliEPI to provide best-valued products and services to all its customers with expanded manufacturing capacities from its Texas, USA location” said Yung-Chung Kao, IntelliEPI President and CEO.

“The sale of our gallium arsenide (GaAs) epitaxy business to IntelliEPI reflects our drive to refocus Soitec’s electronics division on its key products under its five-year Soitec 2015 program” explained Bernard Aspar,Senior Vice President and Soitec’s Communication & Power Business Unit General Manager.

About IntelliEPI: Intelligent Epitaxy Technology, Inc. (IntelliEPI) was established in 1999 in Richardson, Texas, to supply epitaxy-based compound semiconductor epi wafers to the electronics and optoelectronics industries. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi wafers on GaAs and InP substrates. Along with IntelliEPI’s extensive experience in MBE processing, the company owns three U.S. patents on real-time in situ growth sensor technology. For more information, visit: http://www.intelliepi.com.

Investor Relations –US
George Wang
972-234-0068 x 106
investors@intelliepi.com

Investor Relations-Taiwan
Orson Fan
(02) 2837-1206 x 103
orson.fan@intelliepi.com

About Soitec: Soitec is an international manufacturing company, a world leader in generating and manufacturing revolutionary semiconductor materials at the frontier of the most exciting energy and electronic challenges. Soitec’s products include substrates for microelectronics (most notably SOI: silicon-on-insulator) and concentrator photovoltaic systems (CPV). The company’s core technologies are Smart Cut™, Smart Stacking™ and Concentrix™, as well as expertise in epitaxy. Applications include consumer and mobile electronics, microelectronics-driven IT, telecommunications, automotive electronics, lighting products and large-scale solar power plants. Soitec has manufacturing plants and R&D centers in France, Singapore, Germany and the United States. For more information, visit: www.soitec.com.

International Media Contacts
(trade press)
Camille Dufour
+33 (0)6 79 49 51 43
camille.dufour@soitec.

Investor Relations
Olivier Brice
+33 (0)4 76 92 93 80
olivier.brice@soitec.com

(business press)
Marylen Schmidt
+33 (0)6 21 13 66 72
marylen.schmidt@soitec.com

IntelliEPI » Uncategorized

Material information press release about share exchange between IET and EZconn Corporation.

Sept 29, 2014 ACQUISITION BY INTELLIEPI OF THE GALLIUM ARSENIDE (GaAs) EPITAXY BUSINESS FROM SOITEC’S SPECIALTY ELECTRONICS SUBSIDIARY