**About IntelliEPI**

       Intelligent Epitaxy Technology, Inc. (IntelliEPI), locating in the Dallas-Fort Worth (DFW) Metroplex is a leading provider of epitaxy wafers for advanced compound semiconductor applications. The company specializes in the crystal growth of high-quality compound semiconductor epitaxy wafers based on an advanced production Molecular Beam Epitaxy technology platform. IntelliEPI serves a global clientele in markets spanning defense, telecommunications, automotive, and more. The company is dedicated to fostering innovation, ensuring quality, and leading advancements in semiconductor technology.

**Contact Information:**
For more information, please contact:
Tina Ding
Senior Accountant/HR manager
Intelligent Epitaxy Technology, Inc.
Phone: (972) 234-0068 ext. 267
Email: info@intelliepi.com

As the new Riber’s flagship, the MBE 8000 is the highest capacity MBE production tool available on the market, able to handle batches of eight 150 mm (6 inches) or four 200 mm (8 inches) wafers. The design of this machine benefits from over 20 years’ experience in production MBE systems running daily around the world and enabling outstanding process performances and stability, thus reducing their cost of ownership.
Following the delivery of the first MBE 8000 platform and after a thorough qualification work carried out in close cooperation with IntelliEPI, the results obtained have exceeded the expectations for such technology, particularly in terms of uniformities, defect densities, increasing yield, and interface abruptness, which is key for superlattices structures to achieve high performance lasers.
Those performances combined with a high level of run-to-run repeatability control in large-scale production will enable new generation lasers, in particular for the fast-growing VCSEL (vertical-cavity surface-emitting laser) technology with significant market opportunities in the field of smartphone under display facial recognition.
In its latest report on VCSEL, Yole Group specified: a “major change expected is a shift in wavelength from 940 to 1,380nm (…)to achieve an integration of the VCSELs behind organic light emitting diode (OLED) displays, which are transparent at this wavelength. The first application could be the proximity sensor being placed under the display (…).” (source)
On top of the VCSEL market, the precise control of the doping uniformity and the processes stability offered by the MBE 8000 platform will also enhance microelectronic device performances, such as conductivity.
Over the past few months, as results were disclosed to several industrial customers, interest for this machine as grown quickly, leading to discussions for potential purchase.
According to Yung-Chung Kao, IntelliEPI President and CEO, “From the initial evaluation so far, this Riber MBE 8000 has shown very impressive performance in terms of being able to produce high quality epi materials over such a large substrate platen area with excellent composition and thickness uniformity across the 8×6” platen. With this improvement, the MBE 8000 platform offers a solution to make large-scale production MBE technology more competitive especially for high performance and high throughput market opportunities
Christian Dupont, Riber’s CEO : ”Thanks to the efforts of Riber and IntelliEPI teams, we have reached a major step for MBE 8000 qualification. The results provided by the machine exceed our initial objectives. With an optimum cost of ownership and large capacity the MBE 8000 equipment has strong commercial prospects. In addition, our milestone in this joint development program with IntelliEPI demonstrates the capability to bring MBE technology in high volume semiconductor industry. ”

Source from: https://www.riber.com/financial_documents/riber-et-intelliepi-qualifient-la-performance-du-mbe-8000/
Related News:
https://www.semiconductor-today.com/news_items/2023/jun/riber-intelliepi-150623.shtml
https://compoundsemiconductor.net/article/116952/Setting_new_standards_for_MBE_

Hybrid Epitaxy – A New Epi-model to Support III-V Semiconductors

This presentation described the evolution of epi-foundries from early day traditional merchant single source epitaxy services to nowadays hybrid epitaxy model with not only epi-tools integration but also the addition of regrowth and post-growth metallization steps to the epi-device structures. Since III-V semiconductors in particular have the highest level in epi-layers maturity and complexity, we focus our discussion using III-V epi-devices.

Molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) are two most important modern epitaxy techniques that used extensively to prepare epi-wafers for III-V semiconductor electronic/optoelectronic devices. Most of the foundries were formed about 25 to 35 years ago, during the early part of the mobile phone era. The merchant epi-foundries bought either MBE or MOCVD equipment, now up to 8x6in multiwafer production configuration, from a handful of equipment manufacturers and to supply custom designed, tightly specified, epitaxial films on either GaAs or InP substrates for a variety of customers. In this type of service, epitaxial design come from the customer and the epi-foundry then converts the customer’s design into overlaying epitaxial films on one or multiple substrates using either MBE or MOCVD apparatus. As-grown epi-wafers characterization is done to ensure successful completion of the job. And wafers are delivered to customers or IC foundries for processing and fabrication. Up to date, almost all the advanced and mature III-V compound semiconductors devices are prepared on II-V epitaxial wafers.

Since every epi-technique has its limitations and no single growth machine can be configured with all the species. There are also apparent risks of cross contamination if certain species are used in the same chamber. In other words, each epitaxial tool’s configuration, various epi-layers attributes (control of thickness, composition, and doping range), and interface quality between layers, determine the epitaxial devices performance upper limits. As all the dataintensive applications in communication networks demand ever higher bandwidth and capacity, the performance requirements on all optoelectronics and RF devices are almost pushed beyond what current epi-tools can provide. In order to reach higher power, efficiency, and speed, epitaxial industry needs to expand it capabilities and relax the restrictions to support the 5G, and beyond. We discussed the following epitaxial combination possibilities, or called hybrid epitaxy, that are either established at our facilities or under proposition to be included:

• MOCVD & MBE growth combination: Dilute-nitride QW VCSEL, quantum dot QW Laser
• Epitaxy processing & re-growth: VCSEL with tunnel junction, MBE n+GaN on MOCVD GaN HEMT
• Inter-systems linkage: UHV inter-connection of As/P MBE system with As/Sb/N MBE system; MBE and MOCVD
• MBE systems with in situ sensors installed for monitoring and control
• MBE UHV linkage to processing chamber: post InP HBT epi-growth in situ metallization, pre epitaxial growth hydrogen cleaning
• Cluster tool connection to many single wafer MBE/MOCVD chambers: for 200mm & 300mm GaN/Si

In this talk, we used various device structures prepared under hybrid epitaxy to illustrate the feasibility to push device performance to higher limits without substantially increase in cost. The fundamental tools used are still MBE and MOCVD. The hardware linkage tools and various techniques used to protect and/or to clean the interface, respectively, was be discussed in the presentation.

In the agreement, both companies committed to strengthen the collaboration in the successful demonstration of GaN growth in large format MBE systems, sharing epitaxial material capabilities, and market development. The modified 7×6” MBE system was successfully shipped to Korea by the end of November and is scheduled to be set up in the beginning of 2022.

As evidence of our commitment to CSR, IntelliEPI is pleased to share the results of our recent RBA Validated Assessment Program (VAP). IntelliEPI achieved Gold recognition for scoring above 183 out of a possible 200 points. This was made possible through strong partnership with our customers and suppliers, and contributions throughout the IntelliEPI organization. While proud of this accomplishment, work remains to stay vigilant and continue improving.

Address:
6F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.)
台北市士林區德行西路33號6樓

Telphone： 02-2837-1206
Fax: 02-2837-1606

GaN/Si (up to 200mm) and GaN/SiC (up to 150mm) are now available for evaluation.

IVWorks, an innovative start-up company that utilizes Hybrid-MBE technology to produce high-quality GaN epi-wafers, has developed a machine learning-based artificial intelligence (AI) epitaxy system “DommTM”, dramatically improving the productivity and scalability. Hybrid-MBE growth is performed with a hybrid nitrogen source of ammonia and plasma for optimal quality and high growth rate. In addition, DommTM, the IVWorks’ AI technology, uses a deep learning algorithm to detect and analyze reflection high energy electron diffraction (RHEED) patterns, which can monitor crystal growth at the atomic level during MBE growth in real-time. Furthermore, a prediction model is created by learning the validity and correlation of the dataset that integrates classified RHEED patterns, growth conditions, and quality results of the epiwafers. This prediction model can be applied to epiwafer manufacturing to maximize productivity.

IntelliEPI specializes in As, P, and Sb based MBE epi wafer production as well as GaSb substrates manufacturing. Its products include a wide range of electrical and optical device epitaxy wafers. IntelliEPI will leverage its strength in high volume MBE production, equipment modification, and component manufacturing to quickly bring GaN to its product line.

Dr. Young-kyun Noh, IVWorks’ CEO, comments: “We are excited by the opportunities that will result from this partnership. By partnering with MBE epi wafer production experts such as IntelliEPI, we will accelerate the role we play in supplying high quality GaN epi-wafers to the global semiconductor industry through the revolutionary AI manufacturing system, while enhancing market penetration and response. Thanks to IntelliEPI’s long experience of compound semiconductor epi wafer business and large-scale production, we will be able to significantly strengthen competitiveness for the GaN epi business.”

Dr. Yung-Chung Kao, IntelliEPI’s President and CEO, comments: “This partnership will advance MBE GaN growth by combining AI technology from IVWorks and IntelliEPI’s large-scale production MBE growth capabilities and related equipment expertise. IntelliEPI will work closely with IVWorks to develop a global business based on MBE GaN technology for RF and power device markets.”

IVWorks’ 200mm GaN HFET on Si epi-wafer

IVWorks Co., Ltd. (IVWorks), which manufactures GaN epitaxial wafers by using the deep learning-based AI epitaxy technology, was established in 2011 in Daejeon, South Korea to supply GaN epi wafers to the RF and power electronics industries. The company is currently manufacturing 100 mm to 200 mm GaN epi wafers by using three production MBE systems.
Website: www.ivwkr.com.

Intelligent Epitaxy Technology, Inc. (IntelliEPI), was established in 1999 in Richardson, Texas to supply epitaxy-based compound semiconductor epi wafers to the electronics and optoelectronics industries. The company utilizes its proprietary real-time in-situ growth monitoring technology on MBE systems for the manufacturing of epi wafers on GaAs, InP, GaSb and other substrates. Along with IntelliEPI’s extensive experience in MBE material growth technology, the company owns three U.S. patents on real-time in situ growth sensor technology. For more information, visit: http://www.intelliepi.com.

Address:
5F., No.33, Dexing W. Rd., Shilin Dist., Taipei City 11158, Taiwan (R.O.C.)
台北市士林區德行西路33號5樓

Telphone： 02-2837-1206
Fax: 02-2837-1606

This partnership aims at addressing the market requirements for a reliable second source, while also extending the leadership position of both companies in the GaAs market as well as delivering the best product at the lowest cost for the customers. The agreement includes a technology license granted by Soitec to IntelliEPI, which may be extended to address future business opportunities in the GaAs market, including equipment transfer.

“We are delighted to announce the license of our technology leading to a second source for our products for our key GaAs customers,” said Bernard Aspar, Senior Vice President and Soitec’s Communication & Power Business Unit General Manager.

“This collaborative agreement will reinforce our GaAs technology and product know-how, at the same time, offering Soitec’s customers supply-chain security,” said Yung-Chung Kao, IntelliEPI President and CEO.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.

About Soitec: Soitec is an international manufacturing company, a world leader in generating and manufacturing revolutionary semiconductor materials at the frontier of the most exciting energy and electronic challenges. Soitec’s products include substrates for microelectronics (most notably SOI: Silicon-on-Insulator) and concentrator photovoltaic systems (CPV). The company’s core technologies are Smart Cut™, Smart Stacking™ and Concentrix™, as well as expertise in epitaxy. Applications include consumer and mobile electronics, microelectronics-driven IT, telecommunications, automotive electronics, lighting products and large-scale solar power plants. Soitec has manufacturing plants and R&D centers in France, Singapore, Germany and the United States. For more information, visit: www.soitec.com.

International Media Contacts
(trade press)
Camille Darnaud-Dufour
+33 (0)6 79 49 51 43
camille.darnaud-dufour@soitec.com

(business press)
Marylen Schmidt
+33 (0) 4 76 92 87 83
marylen.schmidt@soitec.com

Investor Relations
Olivier Brice
+33 (0)4 76 92 93 80
olivier.brice@soitec.com